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  Datasheet File OCR Text:
 SEMiX 503GD126HDc
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX(R)33c Trench IGBT Modules
SEMiX 503GD126HDc Module Preliminary Data Inverse Diode
Features
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Typical Applications
Remarks
GB
1
19-04-2007 SCH
(c) by SEMIKRON
SEMiX 503GD126HDc
Characteristics Symbol Conditions Inverse Diode min. typ. max. Units
SEMiX(R)33c Trench IGBT Modules
Module SEMiX 503GD126HDc
Preliminary Data
Features
Temperature sensor
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
Remarks
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
GB
2
19-04-2007 SCH
(c) by SEMIKRON
SEMiX 503GD126HDc
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
19-04-2007 SCH
(c) by SEMIKRON
SEMiX 503GD126HDc
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
19-04-2007 SCH
(c) by SEMIKRON
SEMiX 503GD126HDc
5
19-04-2007 SCH
(c) by SEMIKRON


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